| Indium(III) arsenide | |
|---|---|
| Image:Indium(III) arsenide.jpg | |
| Other names | indium arsenide, indium monoarsenide |
| Identifiers | |
| CAS number | [1303-11-3] |
| Properties | |
| Molecular formula | InAs |
| Molar mass | 189. CAS registry numbers are unique numerical identifiers for Chemical compounds Polymers biological sequences mixtures and Alloys They are also referred to A chemical formula is a way of expressing information about the Atoms that constitute a particular Chemical compound, and how the relationship between those atoms changes Molar mass, symbol M, is the Mass of one mole of a substance ( Chemical element or Chemical compound) 74 g. mol-1 |
| Density | 5680 kg. The density of a material is defined as its Mass per unit Volume: \rho = \frac{m}{V} Different materials usually have different m-3 |
| Melting point |
942 °C |
| Solubility in other solvents | insoluble |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
|
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor material, a semiconductor composed of indium and arsenic. The melting point of a solid is the temperature range at which it changes state from solid to Liquid. Solubility is the characteristic Physical property referring to the ability of a given substance the Solute, to dissolve in a Solvent. In Chemistry, the standard state of a material is its state at 1 bar (100 Kilopascals exactly A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that Indium (ˈɪndiəm is a Chemical element with chemical symbol In and Atomic number 49 Arsenic (ˈɑrsənɪk is a Chemical element that has the symbol As and Atomic number of 33 It has the appearance of grey cubic crystals with melting point 942 °C. The cubic crystal system (or isometric) is a Crystal system where the Unit cell is in the shape of a Cube.
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3. An infrared detector is a Photodetector that reacts to Infrared (IR Radiation. In Physics wavelength is the distance between repeating units of a propagating Wave of a given Frequency. 8 µm. The detectors are usually photovoltaic photodiodes. Photovoltaics ( PV) is the field of technology and research related to the application of Solar cells for Energy by converting Sunlight directly A photodiode is a type of Photodetector capable of converting Light into either current or Voltage, depending upon the mode of operation Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. A laser diode is a Laser where the active medium is a Semiconductor similar to that found in a Light-emitting diode.
Indium arsenide is similar to gallium arsenide. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic.
Indium arsenide is sometimes used together with indium phosphide. Indium phosphide ( is a binary Semiconductor composed of Indium and Phosphorus. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principially similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic. Indium gallium arsenide ( InGaAs) is a Semiconductor composed of Indium, Gallium and Arsenic. In Solid state physics and related applied fields a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states Indium nitride ( is a small bandgap semiconductor material which has potential application in Solar cells and high speed electronics Gallium nitride ( is a very hard material commonly used in bright LEDs since the 1990s Indium gallium nitride ( InGaN, x1-x is a Semiconductor material made of a mix of Gallium nitride (GaN and Indium nitride
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. A quantum dot is a Semiconductor whose Excitons are confined in all three Spatial dimensions. Indium phosphide ( is a binary Semiconductor composed of Indium and Phosphorus. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots. The Lattice Constant refers to the constant distance between Unit cells in a Crystal lattice. [1] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
See also
References
External links
- Ioffe institute data archive entry
- National Compound Semiconductor Roadmap entry for InAs at ONR web site
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