The gate oxide is the third region of the MOSFET between the source and drain. The metal–oxide–semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals It is a thin layer of pure, defect free, 5 - 200 nm thick thermally grown oxide. An oxide is a Chemical compound containing at least one Oxygen atom as well as at least one other element It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. A dielectric is a nonconducting substance ie an insulator. The term was coined by William Whewell in response to a request from Michael Faraday. In Physics, the space surrounding an Electric charge or in the presence of a time-varying Magnetic field has a property called an electric field (that can Electrical conductance is a measure of how easily Electricity flows along a certain path through an Electrical element.
Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungsten, a silicide (TiSi, MoSi, TaSi or WSi) or a sandwich of these layers. In Science and engineering, a conductor is a material which contains movable Electric charges. WikipediaNaming Silicon (ˈsɪlɪkən or /ˈsɪlɪkɒn/ silicium is the Chemical element that has the symbol Si and Atomic number 14 A refractory is a material that retains its strength at high Temperatures ASTM C71 defines refractories as "non-metallic materials having those chemical and physical The M acro E xpansion T emplate A ttribute L anguage complements TAL, providing macros which allow the reuse of code across Tungsten (ˈtʌŋstən also known as wolfram (/ˈwʊlfrəm/ is a Chemical element that has the symbol W and Atomic number 74 A silicide is a compound that has Silicon with more Electropositive elements This gate electrode is often called gate metal or gate conductor. The geometrical width of the gate conductor electrode (Z, W) is called the gate width. The gate width or geometrical gate width is not to be confused with the conduction channel width or electrical channel width since they are not equal. The conduction channel may be slightly wider due to fringe electric fields at the two width (Z-direction) edges of the gate electrode.
Below the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate (for an n-MOS device). It is induced by the oxide electric field from the applied gate voltage VG. Electrical tension (or voltage after its SI unit, the Volt) is the difference of electrical potential between two points of an electrical This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the drain. The electron is a fundamental Subatomic particle that was identified and assigned the negative charge in 1897 by J [1]
References
- ^ Fundamentals of Solid-State Electronics, Chih-Tang Sah. World Scientific, first published 1991, reprinted 1992, 1993 (pbk), 1994, 1995, 2001, 2002, 2006, ISBN 9810206372. -- ISBN 9810206380 (pbk).