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Gallium(III) nitride
IUPAC name Gallium(III) nitride
Other names None Listed. IUPAC Nomenclature is a system of naming Chemical compounds and of describing the science of Chemistry in general
Identifiers
CAS number [25617-97-4]
Properties
Molecular formula GaN
Molar mass 83. CAS registry numbers are unique numerical identifiers for Chemical compounds Polymers biological sequences mixtures and Alloys They are also referred to A chemical formula is a way of expressing information about the Atoms that constitute a particular Chemical compound, and how the relationship between those atoms changes Molar mass, symbol M, is the Mass of one mole of a substance ( Chemical element or Chemical compound) 7297 g/mol
Appearance Yellow powder.
Density 6. The density of a material is defined as its Mass per unit Volume: \rho = \frac{m}{V} Different materials usually have different 15 g/cm3, solid
Melting point

>2500°C[1]
Boiling point

-
Solubility in water Reacts. The melting point of a solid is the temperature range at which it changes state from solid to Liquid. The boiling point of a liquid is the temperature at which the Vapor pressure of the liquid equals the environmental pressure surrounding the liquid Solubility is the characteristic Physical property referring to the ability of a given substance the Solute, to dissolve in a Solvent. Water is a common Chemical substance that is essential for the survival of all known forms of Life.
Basicity (pKb) N/A
Structure
Crystal structure Zinc Blende, Wurtzite
Hazards
EU classification None listed. In Mineralogy and Crystallography, a crystal structure is a unique arrangement of Atoms in a Crystal. The cubic crystal system (or isometric) is a Crystal system where the Unit cell is in the shape of a Cube. This article is about the mineral wurtzite For the wurtzite crystal structure see Wurtzite (crystal structure. Council Directive 67/548/EEC of 27 June 1967 on the approximation of laws regulations and administrative provisions relating to the classification packaging and labelling
R-phrases R36, R37, R38, R43. R-phrases (short for Risk Phrases) are defined in Annex III of European Union Directive 67/548/EEC: Nature of special risks attributed to dangerous R-phrases (short for Risk Phrases) are defined in Annex III of European Union Directive 67/548/EEC: Nature of special risks attributed to dangerous R-phrases (short for Risk Phrases) are defined in Annex III of European Union Directive 67/548/EEC: Nature of special risks attributed to dangerous R-phrases (short for Risk Phrases) are defined in Annex III of European Union Directive 67/548/EEC: Nature of special risks attributed to dangerous R-phrases (short for Risk Phrases) are defined in Annex III of European Union Directive 67/548/EEC: Nature of special risks attributed to dangerous
S-phrases S24, S37. S-phrases are defined in Annex IV of European Union Directive 67/548/EEC: Safety advice concerning dangerous substances and preparations. S-phrases are defined in Annex IV of European Union Directive 67/548/EEC: Safety advice concerning dangerous substances and preparations. S-phrases are defined in Annex IV of European Union Directive 67/548/EEC: Safety advice concerning dangerous substances and preparations.
Flash point Non-flammable. The flash point of a flammable liquid is the lowest Temperature at which it can form an ignitable mixture in air
Related compounds
Other anions None listed. An ion is an Atom or Molecule which has lost or gained one or more Valence electrons giving it a positive or negative electrical charge
Other cations None listed. An ion is an Atom or Molecule which has lost or gained one or more Valence electrons giving it a positive or negative electrical charge
Related bases None listed. In Chemistry, a base is most commonly thought of as an aqueous substance that can accept Protons This refers to the Brønsted-Lowry theory of acids and
Related compounds BN, InN, AlN, AlAs, InAs,

GaSb, AlGaAs, InGaAs,
GaAsP, GaAs, GaMe3,
AsH3, GaP
Except where noted otherwise, data are given for
materials in their standard state
(at 25 °C, 100 kPa)
Infobox disclaimer and references

Gallium nitride (GaN) is a very hard material commonly used in bright LEDs since the 1990s. Boron nitride ( BN) is a binary chemical compound, consisting of equal numbers of Boron and Nitrogen atoms Indium nitride ( is a small bandgap semiconductor material which has potential application in Solar cells and high speed electronics Aluminium nitride ( Al[[Nitrogen N]] is a Nitride of Aluminium. Aluminium arsenide (also aluminum arsenide) AlAs, is a Semiconductor material with almost the same Lattice constant as GaAs and Indium arsenide, InAs, or indium monoarsenide, is a Semiconductor material, a Semiconductor composed of Indium and Arsenic Gallium antimonide (GaSb is a semiconducting compound of Gallium and Antimony of the III-V family Aluminium gallium arsenide (also aluminum gallium arsenide) ( Al x Ga 1-x As) is a Semiconductor material with very Indium gallium arsenide ( InGaAs) is a Semiconductor composed of Indium, Gallium and Arsenic. Gallium arsenide phosphide () is a Semiconductor material, an alloy of Gallium arsenide and Gallium phosphide. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic. Trimethylgallium, Ga(CH33 often abbreviated to TMG, is the preferred Metalorganic source of Gallium for Metalorganic Arsine is the chemical compound with the formula As[[hydrogen H]]3 Gallium phosphide () a Phosphide of Gallium, is a compound Semiconductor material with an indirect Band gap In Chemistry, the standard state of a material is its state at 1 bar (100 Kilopascals exactly Gallium (ˈgæliəm is a Chemical element that has the symbol Ga and Atomic number 31 Nitrogen (ˈnaɪtɹəʤɪn is a Chemical element that has the symbol N and Atomic number 7 and Atomic weight 14

The compound is a direct-bandgap semiconductor material of wurtzite crystal structure, with a wide (3. A chemical compound is a substance consisting of two or more different elements chemically bonded together in a fixed proportion by Mass. A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that This article is about the mineral wurtzite For the wurtzite crystal structure see Wurtzite (crystal structure. 4 eV) band gap, used in optoelectronic, high-power and high-frequency devices. In Solid state physics and related applied fields a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states Optoelectronics is the study and application of electronic devices that source detect and control Light, usually considered a sub-field of Photonics. It is a binary group III/group V direct bandgap semiconductor. In Semiconductor Physics, a direct Bandgap means that the minimum energy of the Conduction band lies directly above the maximum energy of the A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Image talkNew_radiation_symbol_ISO_21482svg for details --> Ionizing radiation In chemistry a nitride is a compound of Nitrogen with a less Electronegative element where nitrogen has an Oxidation state of -3 A solar cell or photovoltaic cell is a device that converts Solar energy into Electricity by the photovoltaic effect. This article is about artificial satellites For natural satellites also known as moons see Natural satellite. Because GaN transistors can operate at much hotter temperatures and work at much higher voltages than GaAs transistors, they make ideal power amplifiers at microwave frequencies. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic.

Contents

Physical properties

GaN is a very hard, mechanically stable material with large heat capacity. Specific heat capacity, also known simply as specific heat, is the measure of the heat energy required to increase the Temperature of a unit quantity [2] In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants. Thin films are thin material layers ranging from fractions of a Nanometre to several Micrometres in thickness Sapphire (antique greek hyacinthos refers to gem varieties of the mineral Corundum, an Aluminium oxide (Al2O3 when it is a color other than Silicon carbide ( is a compound of Silicon and Carbon bonded together to form Ceramics but it also occurs in nature as the extremely rare mineral The Lattice Constant refers to the constant distance between Unit cells in a Crystal lattice. [2] GaN can be doped with silicon (Si) or with oxygen[3] to N-type and with magnesium (Mg) to P-type,[4] however the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle. A dopant, also called doping agent and dope, is an impurity element added to a crystal or semiconductor lattice in low concentrations in order to alter the optical/electrical Silicon (ˈsɪlɪkən or /ˈsɪlɪkɒn/ silicium is the Chemical element that has the symbol Si and Atomic number 14 Oxygen (from the Greek roots ὀξύς (oxys (acid literally "sharp" from the taste of acids and -γενής (-genēs (producer literally begetteris the An N-type semiconductor (N for Negative) is obtained by carrying out a process of doping, that is by adding an impurity of valence -five elements to A P-type semiconductor (P for Positive) is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order Stress is a measure of the average amount of Force exerted per unit Area. [5] Gallium nitride compounds also tend to have a high spatial defect frequency, on the order of a hundred million to ten billion defects per square centimeter. [6]

GaN-based parts are very sensitive to electrostatic discharge. Electrostatic discharge ( ESD) is the sudden and momentary Electric current that flows between two objects at different Electrical potentials The term is [7]

Developments

The high crystalline quality of GaN can be realized by low temperature deposited buffer layer technology. [8] This high crystalline quality GaN led to the discovery of p-type GaN,[4] p-n junction blue/UV-LEDs[4] and room-temperature stimulated emission[9] (indispensable for laser action). [10] This has led to the commercialization of high-performance blue LEDs and long-lifetime violet-laser diodes (LDs), and to the development of nitride-based devices such as UV detectors and high-speed field-effect transistors. The field-effect transistor (FET is a type of Transistor that relies on an Electric field to control the shape and hence the conductivity of a 'channel'

High-brightness GaN light-emitting diodes (LEDs) completed the range of primary colors, and made applications such as daylight visible full-color LED displays, white LEDs and blue laser devices possible. A laser is a device that emits Light ( Electromagnetic radiation) through a process called Stimulated emission. The first GaN-based high-brightness LEDs were using a thin film of GaN deposited via MOCVD on sapphire. Metalorganic vapour phase epitaxy (MOVPE is a Chemical vapour deposition method of epitaxial growth of materials especially Compound semiconductors from Sapphire (antique greek hyacinthos refers to gem varieties of the mineral Corundum, an Aluminium oxide (Al2O3 when it is a color other than Other substrates used are zinc oxide, with lattice constant mismatch only 2%, and silicon carbide (SiC). Zinc oxide is a Chemical compound with the formula ZnO It is nearly insoluble in water but soluble in Acids and Bases It occurs The Lattice Constant refers to the constant distance between Unit cells in a Crystal lattice. Silicon carbide ( is a compound of Silicon and Carbon bonded together to form Ceramics but it also occurs in nature as the extremely rare mineral

Group III nitride semiconductors are recognized as one of the most promising materials for fabricating optical devices in the visible short-wavelength and UV region. Potential markets for high-power/high-frequency devices based on GaN include microwave radio-frequency power amplifiers (such as used in high-speed wireless data transmission) and high-voltage switching devices for power grids. Microwaves are electromagnetic waves with Wavelengths ranging from 1 mm to 1 m or frequencies between 0 Radio frequency ( RF) is a Frequency or rate of Oscillation within the range of about 3 Hz to 300 GHz A potential mass-market application for GaN-based RF transistors is as the microwave source for microwave ovens, replacing the magnetrons currently used. In Electronics, a transistor is a Semiconductor device commonly used to amplify or switch electronic signals A microwave oven, or a microwave, is a Kitchen appliance that cooks or heats Food by Dielectric heating. A cavity magnetron is a high-powered Vacuum tube that generates coherent Microwaves They are commonly found in Microwave ovens as well as various The large band gap means that the performance of GaN transistors is maintained up to higher temperatures than silicon transistors. The first Gallium Nitride metal/oxide semiconductor field-effect transistor (GaN MOSFET) was experimentally demonstrated by Weixiao Huang of Rensselaer Polytechnic Institute in early 2008[11]

Applications

GaN, when doped with a suitable transition metal such as manganese, is a promising spintronics material (magnetic semiconductors). In Chemistry, the term transition metal (sometimes also called a transition element) has two possible meanings It commonly refers to any element in Manganese (ˈmæŋgəniːz is a Chemical element, designated by the symbol Mn. Spintronics (a Neologism meaning "spin transport electronics" also known as magnetoelectronics is an Emerging technology which exploits the intrinsic Magnetic semiconductors are materials that exhibit both Ferromagnetism (or a similar response and useful Semiconductor properties

Nanotubes of GaN are proposed for applications in nanoscale electronics, optoelectronics and biochemical-sensing applications[12]

A GaN-based blue laser diode is used in the Blu-ray disc technologies, and in devices such as the Sony PlayStation 3. Electronics refers to the flow of charge (moving Electrons through Nonmetal conductors (mainly Semiconductors, whereas electrical A laser diode is a Laser where the active medium is a Semiconductor similar to that found in a Light-emitting diode. ( SCEI) is a Japanese Video game company specializing in a variety of areas in the video game industry mostly in Video game consoles and is a full

The mixture of GaN with In (InGaN) or Al (AlGaN) with a band gap dependent on ratio of In or Al to GaN allows to build light emitting diodes (LEDs) with colors that can go from red to blue. Indium (ˈɪndiəm is a Chemical element with chemical symbol In and Atomic number 49 Indium gallium nitride ( InGaN, x1-x is a Semiconductor material made of a mix of Gallium nitride (GaN and Indium nitride WikipediaNaming Aluminium gallium nitride ( AlGaN) is a Semiconductor material.

Synthesis

GaN crystals can be grown from a molten Na/Ga melt held under 100atm pressure of N2 at 750oC. As Ga will not react with N2 below 1000oC the powder must be made from something more reactive, and is usually made in one of the following ways:

Ga + NH3 -> GaN + 3/2H2
Ga2O3 + NH3 -> GaN + H2O

Safety and toxicity aspects

The toxicology of GaN has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of MOVPE sources have been reported recently in a review. Trimethylgallium, Ga(CH33 often abbreviated to TMG, is the preferred Metalorganic source of Gallium for Metalorganic Ammonia is a compound with the formula N[[hydrogen H3]] It is normally encountered as a Gas with a characteristic pungent Odor Metalorganic vapour phase epitaxy (MOVPE is a Chemical vapour deposition method of epitaxial growth of materials especially Compound semiconductors from [13]

See also

References

  1. ^ [http://dx.doi.org/10.1063/1.1772878 Harafuji, Tsuchiya and Kawamura, J. The Schottky diode (named after German physicist Walter H Schottky; also known as hot carrier diode) is a Semiconductor Diode with Semiconductor devices are Electronic components that exploit the electronic properties of Semiconductor materials principally Silicon, Germanium Molecular beam Epitaxy (MBE, is one of several methods of depositing Single crystals It was invented in the late 1960s at Bell Telephone Laboratories Epitaxy refers to the method of depositing a Monocrystalline film on a monocrystalline substrate Appl. Phys. 96, 2501-2512 (September 1, 2004)
  2. ^ a b Isamu Akasaki and Hiroshi Amano, "Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters", Jpn. J. Appl. Phys. Vol. 36(1997) 5393-5408 doi:10.1143/JJAP.36.5393
  3. ^ Information Bridge: DOE Scientific and Technical Information - - Document #434361
  4. ^ a b c Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasaki, "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Jpn. A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. J. Appl. Phys. Vol. 28 (1989) L2112-L2114, doi:10.1143/JJAP.28.L2112
  5. ^ Shinji Terao, Motoaki Iwaya, Ryo Nakamura, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki, "Fracture of AlxGa1-xN/GaN Heterostructure —Compositional and Impurity Dependence—", Jpn. A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. J. Appl. Phys. Vol. 40 (2001) L195-L197, doi:10.1143/JJAP.40.L195
  6. ^ lbl.gov, blue-light-diodes
  7. ^ Hajime Okumura, "Present Status and Future Prospect of Widegap Semiconductor High-Power Devices", Jpn. A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. J. Appl. Phys. Vol. 45 (2006) 7565-7586, doi:10.1143/JJAP.45.7565
  8. ^ Applied Physics Letters, Volume 48, Issue 5, pp. A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. 353-355 [1]
  9. ^ Hiroshi Amano, Tsunemori Asahi and Isamu Akasaki, "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer", Jpn. J. Appl. Phys. Vol. 29 (1990) L205-L206 doi:10.1143/JJAP.29.L205
  10. ^ Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota, Hiromitsu Sakai, Toshiyuki Tanaka and Masayoshi Koike, "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device", Jpn. A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. J. Appl. Phys. Vol. 34(1995) L1517-L1519 doi:10.1143/JJAP.34.L1517
  11. ^ Rensselaer Polytechnic Institute (2008). A digital object identifier ( DOI) is a permanent identifier given to an Electronic document. Weixiao Huang. Retrieved May 14, 2008, from http://www.eng.rpi.edu/lemelson/finalist_Huang.cfm
  12. ^ Goldberger et al, Nature 422, 599-602 (10 April 2003)
  13. ^ Journal of Crystal Growth (2004); doi:doi:10.1016/j.jcrysgro.2004.09.007

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