Gallium(II) sulfide - Citizendia

Gallium(II) sulfide
Other names	gallium sulfide
Identifiers
CAS number	[12024-10-1]
Properties
Molecular formula	GaS
Molar mass	101. CAS registry numbers are unique numerical identifiers for Chemical compounds Polymers biological sequences mixtures and Alloys They are also referred to A chemical formula is a way of expressing information about the Atoms that constitute a particular Chemical compound, and how the relationship between those atoms changes Molar mass, symbol M, is the Mass of one mole of a substance ( Chemical element or Chemical compound) 789 g/mol
Appearance	yellow
Density	3. The density of a material is defined as its Mass per unit Volume: \rho = \frac{m}{V} Different materials usually have different 86 g/cm³, solid
Melting point	965°C
Hazards
EU classification	not listed
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references

Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The melting point of a solid is the temperature range at which it changes state from solid to Liquid. Council Directive 67/548/EEC of 27 June 1967 on the approximation of laws regulations and administrative provisions relating to the classification packaging and labelling In Chemistry, the standard state of a material is its state at 1 bar (100 Kilopascals exactly A chemical compound is a substance consisting of two or more different elements chemically bonded together in a fixed proportion by Mass. Gallium (ˈgæliəm is a Chemical element that has the symbol Ga and Atomic number 31 Sulfur or sulphur (ˈsʌlfɚ see spelling below) is the Chemical element that has the Atomic number 16 The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga₂⁴⁺ units which have a Ga-Ga distance of 248pm. This layer structure is similar to GaTe and InSe. An unusual metastable form, with a distorted wurtzite, ZnS, structure has been reported as being produced using MOCVD. This article is about the mineral wurtzite For the wurtzite crystal structure see Wurtzite (crystal structure. Metalorganic vapour phase epitaxy (MOVPE is a Chemical vapour deposition method of epitaxial growth of materials especially Compound semiconductors from The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example Ga^tBu₂(S₂CNMe₂) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga²⁺ S²⁻. ^[1]

References

WebElements
Greenwood, N. N. ; Earnshaw, A. (1997). Chemistry of the Elements, 2nd Edition, Oxford:Butterworth-Heinemann. ISBN 0-7506-3365-4.

^ MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS A. Keys, S G. Bott, A. R. Barron Chem. Mater. , 11 (12), 3578 -3587, 1999. doi:10.1021/cm9903632

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