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EBIC experimental schematic
EBIC experimental schematic

Electron beam induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). The scanning electron microscope ( SEM) is a type of Electron microscope that images the sample surface by scanning it with a high-energy beam of Electrons A scanning transmission electron microscope (STEM is a type of Transmission electron microscope. It is used to identify buried junctions or defects in semiconductors, or to examine minority carrier properties. In Physics, a charge carrier denotes a free (mobile unbound particle carrying an Electric charge. EBIC is similar to cathodoluminescence in that it depends on the creation of electron–hole pairs in the semiconductor sample by the microscope's electron beam. Cathodoluminescence is an optical and electrical Phenomenon whereby a beam of Electrons is generated by an Electron gun (e In the Solid state physics of Semiconductors carrier generation and recombination are processes by which mobile Electrons and Electron holes This technique is used in semiconductor failure analysis and solid-state physics. Failure analysis is the process of collecting and analyzing data to determine the cause of a Failure and how to prevent it from recurring Solid-state physics, the largest branch of Condensed matter physics, is the study of rigid Matter, or Solids The bulk of solid-state physics theory and

SEM set up for EBIC
SEM set up for EBIC

Physics of the Technique

If the semiconductor sample contains an internal electric field, as will be present in the depletion region at a p-n junction or schottky junction, the electron–hole pairs will be separated by drift due to the electric field. In Physics, the space surrounding an Electric charge or in the presence of a time-varying Magnetic field has a property called an electric field (that can In Semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region A p-n junction is a junction formed by combining P-type and N-type Semiconductors together in very close contact The Schottky diode (named after German physicist Walter H Schottky; also known as hot carrier diode) is a Semiconductor Diode with If the p- and n-sides (or semiconductor and schottky contact, in the case of a schottky device) are connected through a picoammeter, a current will flow. An ammeter is a Measuring instrument used to measure the Electric current in a circuit.

EBIC is best understood by analogy: in a solar cell, photons of light fall on the entire cell, thus delivering energy and creating electron hole pairs, and cause a current to flow. A solar cell or photovoltaic cell is a device that converts Solar energy into Electricity by the photovoltaic effect. In EBIC, energetic electrons take the role of the photons, causing the EBIC current to flow. However, because the electron beam of an SEM or STEM is very small, it is scanned across the sample and variations in the induced EBIC are used to map the electronic activity of the sample.

Plan-view EBIC showing defects in a diode
Plan-view EBIC showing defects in a diode
Cross-sectional EBIC of a p-n junction
Cross-sectional EBIC of a p-n junction

By using the signal from the picoammeter as the imaging signal, an EBIC image is formed on the screen of the SEM or STEM. When a semiconductor device is imaged in cross-section, the depletion region will show bright EBIC contrast. The shape of the contrast can be treated mathematically to determine the minority carrier properties of the semiconductor, such as diffusion length and surface recombination velocity. In plan-view, areas with good crystal quality will show bright contrast, and areas containing defects will show dark EBIC contrast.

As such, EBIC is a semiconductor analysis technique useful for evaluating minority carrier properties and defect populations.

EBIC has also been extended to the study of local defects in insulators. For example, W. S. Lau (Lau Wai Shing) developed "true oxide electron beam induced current" in the 1990's. Wai Shing Lau (simplified Chinese name 刘偉成 born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing Thus, besides p-n junction or schottky junction, EBIC can also be applied to MOS diodes. A p-n junction is a junction formed by combining P-type and N-type Semiconductors together in very close contact The Schottky diode (named after German physicist Walter H Schottky; also known as hot carrier diode) is a Semiconductor Diode with Local defects in semiconductor and local defects in the insulator could be distinguished. A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that There exists a kind of defect which originates in the silicon substrate and extends into the insulator on top of the silicon substrate. Silicon (ˈsɪlɪkən or /ˈsɪlɪkɒn/ silicium is the Chemical element that has the symbol Si and Atomic number 14 Silicon (ˈsɪlɪkən or /ˈsɪlɪkɒn/ silicium is the Chemical element that has the symbol Si and Atomic number 14 (Please see reference. )

References

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