In solid state physics and related applied fields, the band gap, also called an energy gap or stop band, is a region where a particle or quasiparticle is forbidden from propagating. Solid-state physics, the largest branch of Condensed matter physics, is the study of rigid Matter, or Solids The bulk of solid-state physics theory and In Physics, a quasiparticle refers to a particle -like entity arising in certain systems of interacting particles For insulators and semiconductors, the band gap generally refers to the energy difference between the top of the valence band and the bottom of the conduction band. An insulator, also called a Dielectric, is a material that resists the flow of Electric current. A semiconductor' is a Solid material that has Electrical conductivity in between a conductor and an insulator; it can vary over that In Solids the valence band is the highest range of Electron energies where electrons are normally present at Absolute zero. In the Physics field of Semiconductors and insulators the conduction band is the range of Electron Energy, higher than that of the
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In semiconductors and insulators, electrons are confined to a number of bands of energy, and forbidden from other regions. The electron is a fundamental Subatomic particle that was identified and assigned the negative charge in 1897 by J In Solid-state physics, the electronic band structure (or simply band structure) of a Solid describes ranges of Energy that an Electron The term "band gap" refers to the energy difference between the top of the valence band and the bottom of the conduction band; electrons are able to jump from one band to another. In Solids the valence band is the highest range of Electron energies where electrons are normally present at Absolute zero. In the Physics field of Semiconductors and insulators the conduction band is the range of Electron Energy, higher than that of the
The conductivity of intrinsic semiconductors is strongly dependent on the band gap. Electrical conductivity or specific conductivity is a measure of a material's ability to conduct an Electric current. An intrinsic semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure Semiconductor without any significant Dopant The only available carriers for conduction are the electrons which have enough thermal energy to be excited across the band gap.
Band gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. An alloy is a Solid solution or Homogeneous mixture of two or more elements, at least one of which is a Metal, which itself has It is also possible to construct layered materials with alternating compositions by techniques like molecular beam epitaxy. Molecular beam Epitaxy (MBE, is one of several methods of depositing Single crystals It was invented in the late 1960s at Bell Telephone Laboratories These methods are exploited in the design of heterojunction bipolar transistors (HBTs), laser diodes and solar cells. The Heterojunction bipolar transistor ( HBT) is an improvement of the Bipolar junction transistor (BJT that can handle signals of very high frequencies A laser diode is a Laser where the active medium is a Semiconductor similar to that found in a Light-emitting diode. A solar cell or photovoltaic cell is a device that converts Solar energy into Electricity by the photovoltaic effect.
The distinction between semiconductors and insulators is a matter of convention. One approach is to think of semiconductors as a type of insulator with a low band gap. Insulators with a higher band gap, usually greater than 3 eV, are not considered semiconductors and generally do not exhibit semiconductive behaviour under practical conditions. Electron mobility also plays a role in determining a material's informal classification. In Physics, electron mobility (or simply mobility) is a quantity relating the Drift velocity of Electrons to the applied Electric field
Band gaps depend on temperature because of thermal expansion. Thermal Expansion is the tendency of matter to change in Volume in response to a change in temperature Band gaps also depend on pressure. Band gaps can be either direct or indirect bandgaps, depending on the band structure. In Semiconductor Physics, a direct Bandgap means that the minimum energy of the Conduction band lies directly above the maximum energy of the In Semiconductor Physics, an indirect bandgap is a Bandgap in which the minimum energy in the Conduction band is shifted by a In Solid-state physics, the electronic band structure (or simply band structure) of a Solid describes ranges of Energy that an Electron
Classically, the ratio of probabilities that two states with an energy difference ΔE will be occupied by an electron is given by the Boltzmann factor:

where:
is the energy difference
is Boltzmann's constant
is temperatureAt the Fermi level (or chemical potential), the probability of a state being occupied is ½. In Physics, the Boltzmann factor is a weighting factor that determines the relative probability of a state i in a multi-state system in Thermodynamic equilibrium The exponential function is a function in Mathematics. The application of this function to a value x is written as exp( x) Bridge from macroscopic to microscopic physics Boltzmann's constant k is a bridge between Macroscopic and microscopic physics Temperature is a physical property of a system that underlies the common notions of hot and cold something that is hotter generally has the greater temperature The Fermi energy is a concept in Quantum mechanics usually referring to the energy of the highest occupied Quantum state in a system of Fermions at In Thermodynamics and Chemistry, chemical potential, symbolized by μ, is a term introduced by the American engineer chemist and mathematical If the Fermi level is in the middle of a band gap of 1 eV, this ratio is e -20 or about 2. 0•10-9 at the room-temperature thermal energy of 25. 9 meV.
| Material | Symbol | Band gap (eV) @ 300K |
|---|---|---|
| Silicon | Si | 1. The kelvin (symbol K) is a unit increment of Temperature and is one of the seven SI base units The Kelvin scale is a thermodynamic Silicon (ˈsɪlɪkən or /ˈsɪlɪkɒn/ silicium is the Chemical element that has the symbol Si and Atomic number 14 11 [1] |
| Germanium | Ge | 0. Germanium (dʒɚˈmeɪniəm is a Chemical element with the symbol Ge and Atomic number 32 67 [1] |
| Silicon carbide | SiC | 2. Silicon carbide ( is a compound of Silicon and Carbon bonded together to form Ceramics but it also occurs in nature as the extremely rare mineral 86 [1] |
| Aluminum phosphide | AlP | 2. Aluminium phosphide is the Chemical compound with the formula AlP 45 [1] |
| Aluminium arsenide | AlAs | 2. Aluminium arsenide (also aluminum arsenide) AlAs, is a Semiconductor material with almost the same Lattice constant as GaAs and 16 [1] |
| Aluminium antimonide | AlSb | 1. Aluminium antimonide (AlSb is a Semiconductor material of the III-V family containing Aluminium and Antimony. 6 [1] |
| Aluminium nitride | AlN | 6. Aluminium nitride ( Al[[Nitrogen N]] is a Nitride of Aluminium. 3 |
| Diamond | C | 5. In Mineralogy, diamond is the allotrope of carbon where the carbon atoms are arranged in 5 |
| Gallium(III) phosphide | GaP | 2. Gallium phosphide () a Phosphide of Gallium, is a compound Semiconductor material with an indirect Band gap 26 [1] |
| Gallium(III) arsenide | GaAs | 1. Gallium arsenide ( GaAs) is a compound of two elements Gallium and Arsenic. 43 [1] |
| Gallium(III) nitride | GaN | 3. Gallium nitride ( is a very hard material commonly used in bright LEDs since the 1990s 4 [1] |
| Gallium(II) sulfide | GaS | 2. Gallium(II sulfide, GaS is a Chemical compound of Gallium and Sulfur. 5 (@ 295 K) |
| Gallium antimonide | GaSb | 0. Gallium antimonide (GaSb is a semiconducting compound of Gallium and Antimony of the III-V family 7 [1] |
| Indium(III) phosphide | InP | 1. Indium phosphide ( is a binary Semiconductor composed of Indium and Phosphorus. 35 [1] |
| Indium(III) arsenide | InAs | 0. Indium arsenide, InAs, or indium monoarsenide, is a Semiconductor material, a Semiconductor composed of Indium and Arsenic 36 [1] |
| Zinc sulfide | ZnS | 3. Zinc sulfide (or zinc sulphide is a Chemical compound with the formula Zn[[Sulfur S]] 6 [1] |
| Zinc selenide | ZnSe | 2. Zinc selenide ( Zn[[Selenium Se]] is a light yellow binary solid compound 7 [1] |
| Zinc telluride | ZnTe | 2. Zinc telluride is the Chemical compound with the formula ZnTe 25 [1] |
| Cadmium sulfide | CdS | 2. Cadmium sulfide is a chemical compound with the formula CdS. Cadmium sulfide is yellow in colour and is a semiconductor 42 [1] |
| Cadmium selenide | CdSe | 1. Cadmium selenide ( Cd[[Selenium Se]] is a solid binary compound of cadmium and selenium 73 [1] |
| Cadmium telluride | CdTe | 1. Cadmium telluride (CdTe is a Crystalline compound formed from Cadmium and Tellurium with a zinc blende (cubic crystal structure 49 [2] |
| Lead(II) sulfide | PbS | 0. Lead(II sulfide (also spelled sulphide, see Sulfur#Spelling) is a Chemical compound, most often purified from the Mineral Galena 37 [1] |
| Lead(II) selenide | PbSe | 0. Lead selenide () or lead(II selenide, a Selenide of Lead, is a Semiconductor material. 27 [1] |
| Lead(II) telluride | PbTe | 0. Lead telluride is a compound of lead and Tellurium (PbTe it is a Narrow gap semiconductor. 29 [1] |
In photonics band gaps or stop bands are ranges of photon frequencies where, if tunneling effects are neglected, no photons can be transmitted through a material. Photonics is the science of generating controlling and detecting Photons particularly in the visible and near Infra-red spectrum, but A material exhibiting this behaviour is known as a photonic crystal. Photonic crystals are periodic Optical (nanostructures that are designed to affect the motion of Photons in a similar way that periodicity of a Semiconductor
Similar physics applies to phonons in a phononic crystal. In Physics, a phonon is a quantized mode of vibration occurring in a rigid crystal lattice, such as the Atomic lattice of a Solid A phononic crystal is a material which exhibits Stop bands for Phonons preventing phonons of selected ranges of frequencies from being transmitted through the material